凌昇能源科技股份有限公司 Sunlux Energy Corporation.
 Multi Wafer |
 |
|
|
| Growth method |
Casting |
Lifetime (μs)
(μs) |
P:≧1 |
| Type |
P |
Bevel Edge Length
(mm) |
0.5-2
(45°±10°) |
| Dopant |
Boron |
Length of a Side
(mm) |
Φ8":156±0.5 |
Resistivity
(Ω．cm) |
1~2.5 |
Thickness
(μm) |
200±20 |
Oxygen Concentration
(atoms / cm3) |
≦5X1017 |
TTV
(μm) |
≦30 |
Carbon Concentration
(atoms / cm3) |
≦8X1017 |
Bow
(μs) |
≦75 |
|
|
